Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

  1. Rodilla, H.
  2. González, T.
  3. Moschetti, G.
  4. Grahn, J.
  5. Mateos, J.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242 1361-6641

Année de publication: 2011

Volumen: 26

Número: 2

Type: Article

DOI: 10.1088/0268-1242/26/2/025004 GOOGLE SCHOLAR