Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs

  1. Couso, C.
  2. Pascual, E.
  3. Galeote, J.M.
  4. Martin, M.J.
  5. Rengel, R.
Proceedings:
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

ISBN: 9781457711169

Year of publication: 2012

Type: Conference paper

DOI: 10.1109/ICCDCS.2012.6188919 GOOGLE SCHOLAR

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