Effect of the dopant segregation layer on the static characteristics of Schottky-barrier n-MOSFETs

  1. Couso, C.
  2. Pascual, E.
  3. Galeote, J.M.
  4. Martin, M.J.
  5. Rengel, R.
Actas:
2012 8th International Caribbean Conference on Devices, Circuits and Systems, ICCDCS 2012

ISBN: 9781457711169

Ano de publicación: 2012

Tipo: Achega congreso

DOI: 10.1109/ICCDCS.2012.6188919 GOOGLE SCHOLAR

Obxectivos de Desenvolvemento Sustentable