Monte carlo study of dopant-segregated schottky barrier SoI MOSFETs: Enhancement of the rf performance

  1. Martin-Martinez, M.J.
  2. Couso, C.
  3. Pascual, E.
  4. Rengel, R.
Aldizkaria:
IEEE Transactions on Electron Devices

ISSN: 0018-9383

Argitalpen urtea: 2014

Alea: 61

Zenbakia: 12

Orrialdeak: 3955-3961

Mota: Artikulua

DOI: 10.1109/TED.2014.2360468 GOOGLE SCHOLAR