An ionised-impurity scattering model for 3D Monte Carlo device simulation with discrete impurity distribution

  1. Barraud, S.
  2. Dollfus, P.
  3. Galdin, S.
  4. Rengel, R.
  5. Martín, M.J.
  6. Velázquez, J.E.
Journal:
VLSI Design

ISSN: 1065-514X

Year of publication: 2001

Volume: 13

Issue: 1-4

Pages: 399-404

Type: Conference paper

DOI: 10.1155/2001/96951 GOOGLE SCHOLAR lock_openOpen access editor