1/f Noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K

1. Rumyantsev, S.L.
2. Shur, M.S.
3. Dyakonova, N.
4. Knap, W.
5. Meziani, Y.
6. Pascal, F.
7. Hoffman, A.
8. Hu, X.
9. Fareed, Q.
10. Bilenko, Y.
11. Gaska, R.