Analysis of Surface Charge Effects and Edge Fringing Capacitance in Planar GaAs and GaN Schottky Barrier Diodes

  1. Orfao, B.
  2. Vasallo, B.G.
  3. Moro-Melgar, D.
  4. Perez, S.
  5. Mateos, J.
  6. Gonzalez, T.
Journal:
IEEE Transactions on Electron Devices

ISSN: 1557-9646 0018-9383

Year of publication: 2020

Volume: 67

Issue: 9

Pages: 3530-3535

Type: Article

DOI: 10.1109/TED.2020.3007374 GOOGLE SCHOLAR

Sustainable development goals