A study of metal-oxide-semiconductor capacitors fabricated on SF 6 and SF6+Cl2 reactive-ion-etched Si

  1. Castán, E.
  2. Arias, J.
  3. Barbolla, J.
  4. Cabruja, E.
  5. Lora-Tamayo, E.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1992

Volume: 71

Issue: 6

Pages: 2710-2716

Type: Article

DOI: 10.1063/1.351043 GOOGLE SCHOLAR