Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystals

  1. Frigeri, C.
  2. Weyher, J.L.
  3. Jiménez, J.
  4. Martin, P.
Zeitschrift:
Journal de Physique III

ISSN: 1155-4320

Datum der Publikation: 1997

Ausgabe: 7

Nummer: 12

Seiten: 2339-2360

Art: Artikel

DOI: 10.1051/JP3:1997263 GOOGLE SCHOLAR