Analysis of large impurity atmospheres at dislocations and associated point defect reactions in differently n-doped GaAs crystals

  1. Frigeri, C.
  2. Weyher, J.L.
  3. Jiménez, J.
  4. Martin, P.
Revue:
Journal de Physique III

ISSN: 1155-4320

Année de publication: 1997

Volumen: 7

Número: 12

Pages: 2339-2360

Type: Article

DOI: 10.1051/JP3:1997263 GOOGLE SCHOLAR