Electrical characterization of deep levels existing in fully implanted and rapid thermal annealed p+n InP junctions

  1. Quintanilla, L.
  2. Dueñas, S.
  3. Castán, E.
  4. Pinacho, R.
  5. Peláez, R.
  6. Barbolla, J.
Journal:
Journal of Materials Science: Materials in Electronics

ISSN: 0957-4522

Year of publication: 1999

Volume: 10

Issue: 5

Pages: 413-418

Type: Article

DOI: 10.1023/A:1008913927240 GOOGLE SCHOLAR