Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

  1. Ardila, A.M.
  2. Martínez, O.
  3. Avella, M.
  4. Jiménez, J.
  5. Gérard, B.
  6. Napierala, J.
  7. Gil-Lafon, E.
Aldizkaria:
Applied Physics Letters

ISSN: 0003-6951

Argitalpen urtea: 2001

Alea: 79

Zenbakia: 9

Orrialdeak: 1270-1272

Mota: Artikulua

DOI: 10.1063/1.1399008 GOOGLE SCHOLAR