A physics based approach to ultra-shallow p+-junction formation at the 32 nm node
- Mokhberi, A.
- Pelaz, L.
- Aboy, M.
- Marques, L.
- Barbolla, J.
- Paton, E.
- McCoy, S.
- Ross, J.
- Elliott, K.
- Gelpey, J.
- Griffin, P.B.
- Plummer, J.D.
Aktak:
Technical Digest - International Electron Devices Meeting
ISSN: 0163-1918
Argitalpen urtea: 2002
Orrialdeak: 879-882
Mota: Biltzar ekarpena