A physics based approach to ultra-shallow p+-junction formation at the 32 nm node

  1. Mokhberi, A.
  2. Pelaz, L.
  3. Aboy, M.
  4. Marques, L.
  5. Barbolla, J.
  6. Paton, E.
  7. McCoy, S.
  8. Ross, J.
  9. Elliott, K.
  10. Gelpey, J.
  11. Griffin, P.B.
  12. Plummer, J.D.
Aktak:
Technical Digest - International Electron Devices Meeting

ISSN: 0163-1918

Argitalpen urtea: 2002

Orrialdeak: 879-882

Mota: Biltzar ekarpena