A physics based approach to ultra-shallow p+-junction formation at the 32 nm node

  1. Mokhberi, A.
  2. Pelaz, L.
  3. Aboy, M.
  4. Marques, L.
  5. Barbolla, J.
  6. Paton, E.
  7. McCoy, S.
  8. Ross, J.
  9. Elliott, K.
  10. Gelpey, J.
  11. Griffin, P.B.
  12. Plummer, J.D.
Actes de conférence:
Technical Digest - International Electron Devices Meeting

ISSN: 0163-1918

Année de publication: 2002

Pages: 879-882

Type: Communication dans un congrès