Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon

  1. Hernández-Mangas, J.M.
  2. Arias, J.
  3. Marqués, L.A.
  4. Ruiz-Bueno, A.
  5. Bailón, L.
Zeitschrift:
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

ISSN: 0168-583X

Datum der Publikation: 2005

Ausgabe: 228

Nummer: 1-4 SPEC. ISS.

Seiten: 235-239

Art: Konferenz-Beitrag

DOI: 10.1016/J.NIMB.2004.10.050 GOOGLE SCHOLAR