Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

  1. Dueñas, S.
  2. Castán, H.
  3. Garcia, H.
  4. Gómez, A.
  5. Bailón, L.
  6. Kukli, K.
  7. Niinistö, J.
  8. Ritala, M.
  9. Leskelä, M.
Aldizkaria:
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

ISSN: 1071-1023

Argitalpen urtea: 2009

Alea: 27

Zenbakia: 1

Orrialdeak: 389-393

Mota: Artikulua

DOI: 10.1116/1.3025865 GOOGLE SCHOLAR