Electrical properties of thin zirconium and hafnium oxide high-k gate dielectrics grown by atomic layer deposition from cyclopentadienyl and ozone precursors

1. Dueñas, S.
2. Castán, H.
3. Garcia, H.
4. Gómez, A.
5. Bailón, L.
6. Kukli, K.
7. Niinistö, J.
8. Ritala, M.
9. Leskelä, M.