Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

  1. Oliva, R.
  2. Ibáñez, J.
  3. Cuscó, R.
  4. Kudrawiec, R.
  5. Serafinczuk, J.
  6. Martnez, O.
  7. Jiménez, J.
  8. Henini, M.
  9. Boney, C.
  10. Bensaoula, A.
  11. Artús, L.
Zeitschrift:
Journal of Applied Physics

ISSN: 0021-8979

Datum der Publikation: 2012

Ausgabe: 111

Nummer: 6

Art: Artikel

DOI: 10.1063/1.3693579 GOOGLE SCHOLAR