Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy

  1. Oliva, R.
  2. Ibáñez, J.
  3. Cuscó, R.
  4. Kudrawiec, R.
  5. Serafinczuk, J.
  6. Martnez, O.
  7. Jiménez, J.
  8. Henini, M.
  9. Boney, C.
  10. Bensaoula, A.
  11. Artús, L.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2012

Alea: 111

Zenbakia: 6

Mota: Artikulua

DOI: 10.1063/1.3693579 GOOGLE SCHOLAR