Raman scattering by the E 2h and A 1(LO) phonons of In xGa 1-xN epilayers (0.25 < x < 0.75) grown by molecular beam epitaxy
- Oliva, R.
- Ibáñez, J.
- Cuscó, R.
- Kudrawiec, R.
- Serafinczuk, J.
- Martnez, O.
- Jiménez, J.
- Henini, M.
- Boney, C.
- Bensaoula, A.
- Artús, L.
Aldizkaria:
Journal of Applied Physics
ISSN: 0021-8979
Argitalpen urtea: 2012
Alea: 111
Zenbakia: 6
Mota: Artikulua