Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

  1. Marqués, L.A.
  2. Pelaz, L.
  3. Santos, I.
  4. López, P.
  5. Duffy, R.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 2012

Alea: 111

Zenbakia: 3

Mota: Artikulua

DOI: 10.1063/1.3679126 GOOGLE SCHOLAR lock_openUVADOC editor