Molecular dynamics simulation of the regrowth of nanometric multigate Si devices

  1. Marqués, L.A.
  2. Pelaz, L.
  3. Santos, I.
  4. López, P.
  5. Duffy, R.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 2012

Volumen: 111

Número: 3

Type: Article

DOI: 10.1063/1.3679126 GOOGLE SCHOLAR lock_openUVADOC editor