Analysis of the reduction of tensile stress by post-growth annealing methods in multicrystalline silicon wafers produced by the RST process

  1. Martínez, O.
  2. Tejero, A.
  3. Tupin, E.
  4. González, M.A.
  5. Jiménez, J.
  6. Belouet, C.
  7. Baillis, C.
Journal:
Physica Status Solidi (C) Current Topics in Solid State Physics

ISSN: 1610-1642 1862-6351

Year of publication: 2014

Volume: 11

Issue: 11-12

Pages: 1640-1643

Type: Article

DOI: 10.1002/PSSC.201400047 GOOGLE SCHOLAR