Modeling and experimental characterization of stepped and v-shaped {311} defects in silicon

  1. Marqués, L.A.
  2. Aboy, M.
  3. Dudeck, K.J.
  4. Botton, G.A.
  5. Knights, A.P.
  6. Gwilliam, R.M.
Zeitschrift:
Journal of Applied Physics

ISSN: 1089-7550,  0021-8979

Datum der Publikation: 2014

Ausgabe: 115

Nummer: 14

Art: Artikel

DOI: 10.1063/1.4871538 GOOGLE SCHOLAR lock_openUVADOC editor