Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

  1. Ossorio, Ó.G.
  2. Vinuesa, G.
  3. García, H.
  4. Sahelices, B.
  5. Dueñas, S.
  6. Castán, H.
  7. Ritala, M.
  8. Leskelaˇ, M.
  9. Kemell, M.
  10. Kukli, K.
Zeitschrift:
Solid-State Electronics

ISSN: 0038-1101

Datum der Publikation: 2021

Ausgabe: 186

Art: Artikel

DOI: 10.1016/J.SSE.2021.108114 GOOGLE SCHOLAR