Analysis of the performance of Nb2O5-doped SiO2-based MIM devices for memory and neural computation applications

  1. Ossorio, Ó.G.
  2. Vinuesa, G.
  3. García, H.
  4. Sahelices, B.
  5. Dueñas, S.
  6. Castán, H.
  7. Ritala, M.
  8. Leskelaˇ, M.
  9. Kemell, M.
  10. Kukli, K.
Revista:
Solid-State Electronics

ISSN: 0038-1101

Ano de publicación: 2021

Volume: 186

Tipo: Artigo

DOI: 10.1016/J.SSE.2021.108114 GOOGLE SCHOLAR