Effective control of filament efficiency by means of spacer HfAlOx layers and growth temperature in HfO2 based ReRAM devices

1. Vinuesa, G.
2. Ossorio, O.G.
3. García, H.
4. Sahelices, B.
5. Castán, H.
6. Dueñas, S.
7. Kull, M.
8. Tarre, A.
9. Jogiaas, T.
10. Tamm, A.
11. Kasikov, A.
12. Kukli, K.