Experimental observation of negative susceptance in HfO2-based RRAM devices

  1. Duenas, S.
  2. Castan, H.
  3. Garcia, H.
  4. Ossorio, O.G.
  5. Dominguez, L.A.
  6. Miranda, E.
Aldizkaria:
IEEE Electron Device Letters

ISSN: 0741-3106

Argitalpen urtea: 2017

Alea: 38

Zenbakia: 9

Orrialdeak: 1216-1219

Mota: Artikulua

DOI: 10.1109/LED.2017.2723054 GOOGLE SCHOLAR