Study of the admittance hysteresis cycles in TiN/Ti/HfO2/W-based RRAM devices
- Dueñas, S.
- Castán, H.
- García, H.
- Miranda, E.
- Gonzalez, M.B.
- Campabadal, F.
Journal:
Microelectronic Engineering
ISSN: 0167-9317
Year of publication: 2017
Volume: 178
Pages: 30-33
Type: Article