Simulation of cluster evaporation and transient enhanced diffusion in silicon

  1. Rafferty, C.S.
  2. Gilmer, G.H.
  3. Jaraiz, M.
  4. Eaglesham, D.
  5. Gossmann, H.-J.
Revue:
Applied Physics Letters

ISSN: 0003-6951

Année de publication: 1996

Volumen: 68

Número: 17

Pages: 2395-2397

Type: Article

DOI: 10.1063/1.116145 GOOGLE SCHOLAR

Objectifs de Développement Durable