Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

  1. Macía, J.
  2. Martín, E.
  3. Pérez-Rodríguez, A.
  4. Jiménez, J.
  5. Morante, J.R.
  6. Aspar, B.
  7. Margail, J.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 1997

Alea: 82

Zenbakia: 8

Orrialdeak: 3730-3735

Mota: Artikulua

DOI: 10.1063/1.365735 GOOGLE SCHOLAR