Raman microstructural analysis of silicon-on-insulator formed by high dose oxygen ion implantation: As-implanted structures

  1. Macía, J.
  2. Martín, E.
  3. Pérez-Rodríguez, A.
  4. Jiménez, J.
  5. Morante, J.R.
  6. Aspar, B.
  7. Margail, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1997

Volumen: 82

Número: 8

Pages: 3730-3735

Type: Article

DOI: 10.1063/1.365735 GOOGLE SCHOLAR