Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

  1. Santos, I.
  2. Aboy, M.
  3. López, P.
  4. Marqués, L.A.
  5. Pelaz, L.
Journal:
Journal of Physics D: Applied Physics

ISSN: 1361-6463 0022-3727

Year of publication: 2016

Volume: 49

Issue: 7

Type: Article

DOI: 10.1088/0022-3727/49/7/075109 GOOGLE SCHOLAR lock_openUVADOC editor

Sustainable development goals