Insights on the atomistic origin of X and W photoluminescence lines in c-Si from ab initio simulations

  1. Santos, I.
  2. Aboy, M.
  3. López, P.
  4. Marqués, L.A.
  5. Pelaz, L.
Revue:
Journal of Physics D: Applied Physics

ISSN: 1361-6463,  0022-3727

Année de publication: 2016

Volumen: 49

Número: 7

Type: Article

DOI: 10.1088/0022-3727/49/7/075109 GOOGLE SCHOLAR lock_openUVADOC editor

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