Critical issues in ion implantation of silicon below 5 keV: Defects and diffusion

  1. Agarwal, A.
  2. Gossmann, H.-J.
  3. Eaglesham, D.J.
  4. Pelaz, L.
  5. Jacobson, D.C.
  6. Poate, J.M.
  7. Haynes, T.E.
Revue:
Materials Science and Engineering A

ISSN: 0921-5093

Année de publication: 1998

Volumen: 253

Número: 1-2

Pages: 269-274

Type: Article

DOI: 10.1016/S0921-5093(98)00735-7 GOOGLE SCHOLAR

Objectifs de Développement Durable