Trapping activity on multicrystalline Si wafers studied by combining fast PL imaging and high resolved electrical techniques
- O. Martínez 1
- B. Moralejo 1
- V. Hortelano 1
- A. Tejero 1
- M.A. González 1
- J. Jiménez 1
- J. Mass 2
- V. Parra 3
- 1 University de Valladolid
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2
Universidad del Norte
info
- 3 DC Wafers Investments
- Héctor García
- Helena Castán
Editorial: Universidad de Valladolid
ISBN: 9781467346665
Año de publicación: 2013
Tipo: Capítulo de Libro
Resumen
Multi-crystalline Si is the preferred material in the photovoltaic world market due to the good balance between production costs and efficiency. However, it has a large number of defects acting as recombination centers for the photogenerated carriers. In this work, we use both the fast inspection provided by the photoluminescence imaging technique with the very high spatial resolution of the light beam induced current and electron beam induced current techniques, for obtaining a comprehensive understanding of the electrical activity and distribution of defects in this material.