The role of incomplete interstitial-vacancy recombination on silicon amorphization

  1. Marques, LA
  2. Pelaz, L
  3. Hernandez, J
  4. Barbolla, J
Livre:
SIMULATION OF SEMICONDUCTOR PROCESSES AND DEVICES 2001
  1. Tsoukalas, D (coord.)
  2. Tsamis, C (coord.)

ISBN: 3-211-83708-6

Année de publication: 2001

Pages: 26-29

Congreso: International Conference on Simulation of Semiconductor Processes and Devices (SISPAD 01)

Type: Communication dans un congrès

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La source de données: WoS