A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories

  1. Maldonado, D.
  2. Vinuesa, G.
  3. Aldana, S.
  4. Aguirre, F.L.
  5. Cantudo, A.
  6. García, H.
  7. González, M.B.
  8. Jiménez-Molinos, F.
  9. Campabadal, F.
  10. Miranda, E.
  11. Dueñas, S.
  12. Castán, H.
  13. Roldán, J.B.
Revue:
Materials Science in Semiconductor Processing

ISSN: 1369-8001

Année de publication: 2024

Volumen: 169

Type: Article

DOI: 10.1016/J.MSSP.2023.107878 GOOGLE SCHOLAR lock_openAccès ouvert editor

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