Solar cell Manufacturing: As-cut mc-Si Wafers discrimination using magnetotransport, optical and lifetime measurements

  1. Vicente Parra García
  2. V. Bellani
  3. F. Rossella
  4. I. Colino
  5. Fabio Dionigi
  6. C. Sánchez-Fabrés
  7. Enrique Díez
Konferenzberichte:
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion

ISBN: 3-936338-26-4

Datum der Publikation: 2010

Seiten: 1969 - 1973

Kongress: Proceedings de 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6 - 10 September 2010 (Valencia. España)

Art: Konferenz-Beitrag

DOI: 10.4229/25THEUPVSEC2010-2CV.2.72 GOOGLE SCHOLAR lock_openOpen Access editor

Zusammenfassung

In this paper, a novel physical characterisation of as-cut multicrystalline silicon (mc-Si) wafers from different worldwide suppliers has been performed. The experimental techniques used in this investigation were: i) Magneto-ransport measurements by Hall effect; ii) Ellipsometric spectroscopy; iii) Optical absorption near Si gap; iv) resistivity and QSSPC lifetime measurements. Using all these methodologies, some of them scarcely used so far for mc-Si wafer characterisation, a series of variables from the material were obtained and integrated to define respective fingerprints. Multivariable analysis by Principal Component Analysis highlights the differences between wafers, allowing their discrimination according to their intrinsic properties.