Solar cell Manufacturing: As-cut mc-Si Wafers discrimination using magnetotransport, optical and lifetime measurements

  1. Vicente Parra García
  2. V. Bellani
  3. F. Rossella
  4. I. Colino
  5. Fabio Dionigi
  6. C. Sánchez-Fabrés
  7. Enrique Díez
Actes de conférence:
25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion

ISBN: 3-936338-26-4

Année de publication: 2010

Pages: 1969 - 1973

Congreso: Proceedings de 25th European Photovoltaic Solar Energy Conference and Exhibition / 5th World Conference on Photovoltaic Energy Conversion, 6 - 10 September 2010 (Valencia. España)

Type: Communication dans un congrès

DOI: 10.4229/25THEUPVSEC2010-2CV.2.72 GOOGLE SCHOLAR lock_openAccès ouvert editor

Résumé

In this paper, a novel physical characterisation of as-cut multicrystalline silicon (mc-Si) wafers from different worldwide suppliers has been performed. The experimental techniques used in this investigation were: i) Magneto-ransport measurements by Hall effect; ii) Ellipsometric spectroscopy; iii) Optical absorption near Si gap; iv) resistivity and QSSPC lifetime measurements. Using all these methodologies, some of them scarcely used so far for mc-Si wafer characterisation, a series of variables from the material were obtained and integrated to define respective fingerprints. Multivariable analysis by Principal Component Analysis highlights the differences between wafers, allowing their discrimination according to their intrinsic properties.