NANODISPOSITIVOS ELECTRÓNICOS DE ALTA FRECUENCIA
Grenoble Institute of Technology
Grenoble, FranciaGrenoble Institute of Technology-ko ikertzaileekin lankidetzan egindako argitalpenak (5)
2014
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GaN-based Implanted Self Switching Diodes for THz imaging
2014 39TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
2013
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200 GHz communication system using unipolar InAs THz rectifiers
2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)
2011
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Wide Band Gap Self-Switching Nanodevices for THz Applications at Room Temperature
2011 6TH EUROPEAN MICROWAVE INTEGRATED CIRCUIT CONFERENCE
2004
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100nm InAlAs/InGaAs double-gate HEMT using transferred substrate
IEEE INTERNATIONAL ELECTRON DEVICES MEETING 2004, TECHNICAL DIGEST
2003
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Double-gate HEMTs on transferred substrate
2003 INTERNATIONAL CONFERENCE INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS