Grupo de Caracterización de Materiales y Dispositivos Electrónicos ( Electronic Materials and Devices Characterization Group, GCME)
Universidad Politécnica de Madrid
Madrid, EspañaPublications in collaboration with researchers from Universidad Politécnica de Madrid (8)
2024
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Neuromorphic Technology Insights in Spain
Proceedings of the IEEE Conference on Nanotechnology
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
2005
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
1992
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Influence of refilling effects on deep-level transient spectroscopy measurements in Se-doped AlxGa1-xAs
Journal of Applied Physics, Vol. 72, Núm. 2, pp. 525-530
1991
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Characterization of the DX centers in AlGaAs:Si by admittance spectroscopy
Journal of Applied Physics, Vol. 69, Núm. 8, pp. 4300-4305