Grupo de Caracterización de Materiales y Dispositivos Electrónicos ( Electronic Materials and Devices Characterization Group, GCME)
Publicaciones (142) Publicaciones en las que ha participado algún/a investigador/a
2025
-
Dynamics of set and reset processes in HfO2 -based bipolar resistive switching devices
Microelectronic Engineering, Vol. 296
-
Reset transition in HfO2-Based memristors using a constant power signal
Materials Science in Semiconductor Processing, Vol. 186
2024
-
A thorough investigation of the switching dynamics of TiN/Ti/10 nm-HfO2/W resistive memories
Materials Science in Semiconductor Processing, Vol. 169
-
Breast Carcinoma Prediction Through Integration of Machine Learning Models
IEEE Access, Vol. 12, pp. 134635-134650
-
Detecting the edges of galaxies with deep learning
Astronomy and Astrophysics, Vol. 683
-
Forming and Resistive Switching of HfO2-Based RRAM Devices at Cryogenic Temperature
IEEE Electron Device Letters
-
Impact of the temperature on the conductive filament morphology in HfO2-based RRAM
Materials Letters, Vol. 357
-
Interpretability of deep learning models in analysis of Spanish financial text
Neural Computing and Applications, Vol. 36, Núm. 13, pp. 7509-7527
-
Neuromorphic Technology Insights in Spain
Proceedings of the IEEE Conference on Nanotechnology
-
On the Asymmetry of Resistive Switching Transitions
Electronics (Switzerland), Vol. 13, Núm. 13
-
Thermal dependence of the current in TiN/Ti/HfO2/W memristors at different intermediate conduction states
Materials Science in Semiconductor Processing, Vol. 179
2023
-
3DWS: reliable segmentation on intelligent welding systems with 3D convolutions
Journal of Intelligent Manufacturing
-
Correction to: Systematic Review of Machine Learning Applied to the Prediction of Obesity and Overweight (Journal of Medical Systems, (2023), 47, 1, (8), 10.1007/s10916-022-01904-1)
Journal of Medical Systems
-
Effect of Temperature on the Multilevel Properties and Set and Reset Transitions in HfO2-Based Resistive Switching Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
-
Effects of the voltage ramp rate on the conduction characteristics of HfO2-based resistive switching devices
Journal of Physics D: Applied Physics, Vol. 56, Núm. 36
-
Identification of tidal features in deep optical galaxy images with convolutional neural networks
Monthly Notices of the Royal Astronomical Society, Vol. 521, Núm. 3, pp. 3861-3872
-
Inhomogeneous HfO2layer growth at atomic layer deposition
Journal of Electrical Engineering, Vol. 74, Núm. 4, pp. 246-255
-
Praseodymium Content Influence on the Resistive Switching Effect of HfO2-Based RRAM Devices
14th Spanish Conference on Electron Devices, CDE 2023 - Proceedings
-
Prediction of the Sleep Apnea Severity Using 2D-Convolutional Neural Networks and Respiratory Effort Signals
Diagnostics, Vol. 13, Núm. 20
-
Systematic Review of Machine Learning applied to the Prediction of Obesity and Overweight
Journal of Medical Systems, Vol. 47, Núm. 1