Publicaciones en las que colabora con Bruno Gérard (14)

2009

  1. Spectral image cathodoluminescence, photoluminescence and Raman study of GaAs layers grown on Si substrates

    Superlattices and Microstructures, Vol. 45, Núm. 4-5, pp. 214-221

2008

  1. A study of conformal GaAs on Si layers by micro-Raman and spectral imaging cathodoluminescence

    Materials Research Society Symposium Proceedings

2004

  1. Cathodoluminescence study of Si complex formation in self-doped and intentionally Si-doped GaAs conformal layers

    Journal of Physics Condensed Matter

  2. Optical properties of epitaxial lateral overgrowth GaN structures studied by Raman and cathodoluminescence spectroscopies

    Journal of Applied Physics, Vol. 96, Núm. 7, pp. 3639-3644

2003

  1. Cathodoluminescence and microRaman study of GaN ELO structures

    Materials Research Society Symposium - Proceedings

  2. Study of doping in GaAs layers by local probe techniques: Micro-Raman, micro-photoluminescence and cathodoluminescence

    Materials Research Society Symposium - Proceedings

2002

  1. Doping profiles of n-type GaAs layers grown on Si by the conformal method

    Materials Research Society Symposium - Proceedings, Vol. 692, pp. 417-422

  2. Optical characterization of GaAs/Si layers grown by the conformal method (confined lateral epitaxial growth)

    Journal of Materials Research, Vol. 17, Núm. 6, pp. 1341-1349

  3. Properties of AlGaAs layers grown on Si by the conformal method

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  4. Study of defects in conformal GaAs/Si layers by optical techniques and photoetching

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology

  5. Temperature dependence of the Raman shift in GaAs conformal layers grown by hydride vapor phase epitaxy

    Journal of Applied Physics, Vol. 91, Núm. 8, pp. 5045-5050

2001

  1. Selective doping of conformal GaAs layers grown by hydride vapour phase epitaxy on Si substrates studied by spatially resolved optical techniques

    Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 80, Núm. 1-3, pp. 197-201

  2. Self-doping near the seed/layer interface in conformal GaAs layers grown on Si

    Applied Physics Letters, Vol. 79, Núm. 9, pp. 1270-1272

2000

  1. Characterization of GaAs conformal layers grown by hydride vapour phase epitaxy on Si substrates by microphotoluminescence cathodoluminescence and microRaman

    Journal of Crystal Growth, Vol. 210, Núm. 1, pp. 198-202