Publicaciones en las que colabora con Javier Mateos López (14)
2024
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A Closed-Form Expression for the Frequency-Dependent Microwave Responsivity of Transistors Based on the I-V Curve and S-Parameters
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 1, pp. 415-420
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Analysis of the THz Responsivity of AlGaN/GaN HEMTs by Means of Monte Carlo Simulations
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4556-4562
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High-Frequency Microwave Detection with GaN HEMTs in the Subthreshold Regime
IEEE Transactions on Microwave Theory and Techniques, Vol. 72, Núm. 6, pp. 3753-3758
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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529
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Reverse-bias current hysteresis at low temperature in GaN Schottky barrier diodes
Journal of Applied Physics, Vol. 135, Núm. 1
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Small-Signal Equivalent Circuit Model as a Tool for Optimizing Millimeter-Wave Detection With FETs
IEEE Transactions on Electron Devices, Vol. 71, Núm. 9, pp. 5225-5232
2023
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Analysis of GaN-Based HEMTs Operating as RF Detectors Over a Wide Temperature Range
IEEE Transactions on Microwave Theory and Techniques, Vol. 71, Núm. 7, pp. 3126-3135
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Current and voltage responsivity up to 110 GHz in GaN asymmetric nano-diodes
Applied Physics Letters, Vol. 123, Núm. 12
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Low temperature memory effects in AlGaN/GaN nanochannels
Applied Physics Letters, Vol. 123, Núm. 10
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Responsivity Measurements up to 110 GHz Using AlGaN/GaN HEMTs with Different Gate Size
2023 International Workshop on Integrated Nonlinear Microwave and Millimetre-Wave Circuits, INMMiC 2023 - Proceedings
2022
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Comparison of GaN and InGaAs high electron mobility transistors as zero-bias microwave detectors
Journal of Applied Physics, Vol. 132, Núm. 13
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Temperature and Gate-Length Dependence of Subthreshold RF Detection in GaN HEMTs
Sensors, Vol. 22, Núm. 4
2021
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Influence of Laser Modulation Frequency on the Performance of Terahertz Photoconductive Switches on Semi-Insulating GaAs Exhibiting Negative Differential Conductance
IEEE Transactions on Terahertz Science and Technology, Vol. 11, Núm. 5, pp. 591-597
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Temperature Behavior of Gunn Oscillations in Planar InGaAs Diodes
IEEE Electron Device Letters, Vol. 42, Núm. 8, pp. 1136-1139