F. Danneville-rekin lankidetzan egindako argitalpenak (9)

2006

  1. A microscopic interpretation of the RF noise performance of fabricated FDSOI MOSFETs

    IEEE Transactions on Electron Devices, Vol. 53, Núm. 3, pp. 523-532

2005

  1. Investigation of longitudinal velocity fluctuations in MOSFETs by means of ensemble Monte Carlo simulation

    AIP Conference Proceedings

2003

  1. High-frequency noise in FDSOI MOSFETs: A Monte Carlo investigation

    Proceedings of SPIE - The International Society for Optical Engineering

2002

  1. Numerical and experimental study of a 0.25 μm fully-depleted silicon-on-insulator MOSFET: Static and dynamic radio-frequency behaviour

    Semiconductor Science and Technology, Vol. 17, Núm. 11, pp. 1149-1156

1998

  1. Influence of Al mole fraction on the noise performance of GaAs/AlxGa1-xas HEMT's

    IEEE Transactions on Electron Devices, Vol. 45, Núm. 9, pp. 2081-2083

  2. Noise analysis of 0.1 μm gate MESFETs and HEMTs

    Solid-State Electronics, Vol. 42, Núm. 1, pp. 79-85

1997

  1. Noise and transit time in ungated FET structures

    IEEE Transactions on Electron Devices, Vol. 44, Núm. 12, pp. 2128-2135

1996

  1. Influence of real-space transfer on transit time and noise in HEMTs

    European Solid-State Device Research Conference

  2. Numerical and experimental analysis of the static characteristics and noise in ungated recessed MESFET structures

    Solid-State Electronics, Vol. 39, Núm. 11, pp. 1629-1636