Publicaciones en colaboración con investigadores/as de Institute of Electronics, Microelectronics and Nanotechnology (43)

2024

  1. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529

2022

  1. Analysis of the low temperature behavior of GaN-on-SiC Schottky barrier diodes

    32nd International Symposium of Space Terahertz Technology, ISSTT 2022

2021

  1. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

2020

  1. Analysis of trap states in AlGaN/GaN self-switching diodes via impedance measurements

    Microelectronics Reliability, Vol. 114

2019

  1. GaN-based SSD structure for THz applications

    Asia-Pacific Microwave Conference Proceedings, APMC

2018

  1. Planar Asymmetric Semiconductor Nanodiodes for THz Detection

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

2017

  1. Geometry and bias dependence of trapping effects in planar GaN nanodiodes

    2017 Spanish Conference on Electron Devices, CDE 2017

  2. Microwave detection up to 43.5 GHz by GaN nanodiodes: Experimental and analytical responsivity

    2017 Spanish Conference on Electron Devices, CDE 2017

  3. Monte Carlo analysis of III-V PIN diodes for tunnel-FETs and Impact Ionization-MOSFETs

    2017 Spanish Conference on Electron Devices, CDE 2017

2016

  1. Characterization and modeling of traps and RF frequency dispersion in AlGaN/AlN/GaN HEMTs

    EuMIC 2016 - 11th European Microwave Integrated Circuits Conference

2015

  1. Monte Carlo model for the analysis and development of III-V Tunnel-FETs and Impact Ionization-MOSFETs

    Journal of Physics: Conference Series

2013

  1. Room temperature THz detection and emission with semiconductor nanodevices

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2011

  1. Wide band gap self-switching nanodevices for THz applications at room temperature

    European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 6th European Microwave Integrated Circuit Conference, EuMIC 2011

  2. Wide band gap self-switching nanodevices for THz applications at room temperature

    European Microwave Week 2011: "Wave to the Future", EuMW 2011, Conference Proceedings - 41st European Microwave Conference, EuMC 2011

2010

  1. Three-terminal junctions operating as mixers, frequency doublers and detectors: A broad-band frequency numerical and experimental study at room temperature

    Semiconductor Science and Technology, Vol. 25, Núm. 12

2009

  1. Fabrication and fundamentals of operation of an InAlAs/InGaAs velocity modulation transistor

    Applied Physics Letters, Vol. 94, Núm. 10

  2. Frequency response of T-shaped three branch junctions as mixers and detectors

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Influence of the branches width on the nonlinear output characteristics of InAlAs/InGaAs-based three-terminal junctions

    Journal of Applied Physics, Vol. 105, Núm. 9

2008

  1. Ballistic nanodevices for high frequency applications

    International Journal of Nanotechnology, Vol. 5, Núm. 6-8, pp. 796-808

  2. Monte Carlo simulation of surface charge effects in T-branch nanojunctions

    Physica Status Solidi (C) Current Topics in Solid State Physics