Publikationen in Zusammenarbeit mit Forschern von Chalmers University of Technology (22)

2015

  1. Erratum: On the effect of δ-doping in self-switching diodes (Applied Physics Letters (2014) 105 (093505))

    Applied Physics Letters

  2. Experimental analysis of shot-noise suppression in InGaAs/InAlAs recessed planar diodes at room temperature

    2015 International Conference on Noise and Fluctuations, ICNF 2015

  3. Optimization and small-signal modeling of zero-bias InAs self-switching diode detectors

    Solid-State Electronics, Vol. 104, pp. 79-85

  4. Shot-noise suppression effects in InGaAs planar diodes at room temperature

    Journal of Physics: Conference Series

  5. Temperature and Surface Traps Influence on the THz Emission from InGaAs Diodes

    Journal of Physics: Conference Series

2014

  1. Monte Carlo modelling of noise in advanced III–V HEMTs

    Journal of Computational Electronics, Vol. 14, Núm. 1, pp. 72-86

  2. On the effect of δ-doping in self-switching diodes

    Applied Physics Letters, Vol. 105, Núm. 9

2013

  1. 200 GHz communication system using unipolar InAs THz rectifiers

    International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz

  2. 200 GHz communication system using unipolar InAs THz rectifiers

    2013 38TH INTERNATIONAL CONFERENCE ON INFRARED, MILLIMETER, AND TERAHERTZ WAVES (IRMMW-THZ)

  3. Room temperature THz detection and emission with semiconductor nanodevices

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors

    Semiconductor Science and Technology, Vol. 27, Núm. 6

  2. Monte Carlo studies of the intrinsic time-domain response of nanoscale three-branch junctions

    Journal of Applied Physics, Vol. 111, Núm. 8

  3. Monte Carlo study of the noise performance of isolated-gate InAs/AlSb HEMTs

    Semiconductor Science and Technology, Vol. 27, Núm. 1

2011

  1. Dynamic Monte Carlo study of isolated-gate InAs/AlSb HEMTs

    Semiconductor Science and Technology, Vol. 26, Núm. 2

  2. Monte Carlo study of impact ionization and hole transport in InAs HEMTs with isolated gate

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Monte Carlo study of the dynamic performance of isolated-gate InAs/AlSb HEMTs

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  4. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

    Proceedings of the IEEE 21st International Conference on Noise and Fluctuations, ICNF 2011

  5. Monte Carlo study of the noise performance of isolated-gate InAs HEMTs

    2011 21ST INTERNATIONAL CONFERENCE ON NOISE AND FLUCTUATIONS (ICNF)

  6. Monte carlo analysis of impact ionization in isolated-gate InAs/AlSb high electron mobility transistors

    Acta Physica Polonica A

2010

  1. Isolated-gate InAs/AlSb HEMTs: A Monte Carlo study

    Conference Proceedings - International Conference on Indium Phosphide and Related Materials