Institute of Electronics, Microelectronics and Nanotechnology-ko ikertzaileekin lankidetzan egindako argitalpenak (1)

2024

  1. Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band

    IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529