Roger Antonio
Peña Martín
Institute of Electronics, Microelectronics and Nanotechnology
Villeneuve-d'Ascq, FranciaInstitute of Electronics, Microelectronics and Nanotechnology-ko ikertzaileekin lankidetzan egindako argitalpenak (1)
2024
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Reverse Leakage Current Hysteresis in GaN Schottky Barrier Diodes Interpreted in Terms of a Trap Energy Band
IEEE Transactions on Electron Devices, Vol. 71, Núm. 8, pp. 4524-4529