Oscar
Martinez Sacristan
Consiglio Nazionale delle Ricerche
Roma, ItaliaPublicaciones en colaboración con investigadores/as de Consiglio Nazionale delle Ricerche (12)
2010
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Factors affecting the luminescence emission of InGaN multi-quantum wells grown on (0001) sapphire substrates by MOVPE
Physica Status Solidi (C) Current Topics in Solid State Physics
2009
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Growth and characterization of 3C-SiC films for Micro Electro Mechanical Systems (MEMS) applications
Crystal Growth and Design, Vol. 9, Núm. 11, pp. 4852-4859
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Strain evaluation in SiC MEMS test structures
ECS Transactions
2006
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Origin of the fluctuations in the luminescence emission in InGaN quantum wells
Materials Science in Semiconductor Processing, Vol. 9, Núm. 1-3, pp. 2-7
2004
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Compositional and optical uniformity of InGaN layers deposited on (0001) sapphire by metal-organic vapour phase epitaxy
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 147-151
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Influence of substrate growth temperature on the Cu-Pt type ordering in lattice-matched GaInP/GaAs heterostructures
EPJ Applied Physics
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Optical and structural characterization of self-organized stacked GaN/AiN quantum dots
Journal of Physics Condensed Matter
2003
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Characterization of GaN/InGaN hetero-structures by Raman spectroscopy, PL and CL
Conference Proceedings - International Conference on Indium Phosphide and Related Materials
2002
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Optical and structural characterization of GaN/AlN quantum dots grown on Si(111)
Journal of Physics Condensed Matter, Vol. 14, Núm. 48, pp. 13329-13336
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Optical and structural characterization of LP MOVPE grown lattice matched InGaP/GaAs heterostructures
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
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Raman and photoluminescence mapping of lattice matched InGaP/GaAs heterostructures
Materials Research Society Symposium - Proceedings, Vol. 692, pp. 91-96
1996
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A microraman study of the structural properties of PLD high Tc superconducting thin films
Physica C: Superconductivity and its Applications, Vol. 270, Núm. 1-2, pp. 144-154