Publicacions en què col·labora amb Luis A. Bailón Vega (9)

2005

  1. Boron redistribution in pre-amorphized Si during thermal annealing

    2005 Spanish Conference on Electron Devices, Proceedings

  2. Damage buildup model with dose rate and temperature dependence

    2005 Spanish Conference on Electron Devices, Proceedings

  3. Dose-rate and temperature dependent statistical damage accumulation model for ion implantation into silicon

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  4. Study of the amorphous phase of silicon using molecular dynamics simulation techniques

    2005 Spanish Conference on Electron Devices, Proceedings

2003

  1. Monte Carlo modeling of amorphization resulting from ion implantation in Si

    Computational Materials Science

1997

  1. Dose effects on amorphous silicon sputtering by argon ions: A molecular dynamics simulation

    Journal of Applied Physics, Vol. 81, Núm. 3, pp. 1488-1494

  2. Molecular dynamics simulations of ion bombardment processes

    Materials Science and Technology, Vol. 13, Núm. 11, pp. 893-896

1995

  1. Design of vertical power MOSFETs in SiC

    Proceedings of the International Conference on Microelectronics

  2. Molecular dynamics simulation of amorphous silicon sputtering by Ar+ ions

    Nuclear Inst. and Methods in Physics Research, B, Vol. 102, Núm. 1-4, pp. 301-304